Technology Computer Aided Design (TCAD) Device Simulations Applied to TID Radiation Effects

The teaching material, "SCALE Technology Computer Aided Design (TCAD) Device Simulations Applied to TID Radiation Effects", focuses on using TCAD simulations to understand and mitigate Total Ionizing Dose (TID) radiation effects in semiconductor devices. The main points covered include the mechanisms behind TID effects, such as charge trapping and leakage paths, and how they can impact device performance. The material also discusses various design and process techniques for hardening devices against TID effects, including layout tricks, hardened processes, and doping profile modifications.
The teaching material is designed to be interactive, with a demo of the TCAD tool showing how it can be used to simulate and analyze TID effects in capacitors. The demo will likely walk through the steps involved in setting up and running a simulation, as well as interpreting the results to understand how different design and process parameters affect device behavior under radiation exposure. By using TCAD simulations, students will gain hands-on experience with modeling and analyzing TID effects, allowing them to better understand the underlying physics and develop strategies for designing more resilient devices.