TCAD Device Simulation Demo: TID in a Capacitor

The presentation covers the basics of Total Ionizing Dose (TID) effects on semiconductor devices using the SCALE TCAD device simulation tool. The instructor demonstrates how to simulate TID effects in a capacitor, highlighting the importance of understanding where charge is trapped within the device structure. Using a fully depleted SOI capacitor as an example, the instructor shows how to model and analyze the movement of charge under high electric fields, which can lead to shifts in the device's electrical characteristics.
The presentation also touches on the challenges of simulating TID effects, particularly in modern CMOS devices with thin layers of insulating material. The instructor notes that it is difficult to specifically force trap charge in certain regions of the device, but highlights the value of TCAD simulations in performing sensitivity studies and understanding fundamental device mechanisms. The presentation concludes by emphasizing the potential applications of TCAD simulations in hardening devices against radiation effects and identifying areas where further research is needed.