Displacement Damage and Ionization Effects on Waveguide-Integrated Germanium-Silicon PIN Photodiodes

This presentation discusses the effects of displacement damage and ionization on waveguide-integrated germanium-silicon (GeSi) PIN photodiodes. The speaker explains that as energetic particles collide with the device, they can displace atoms in the material, leading to an increase in dark current. This relationship is probabilistic, meaning that there is a certain probability of atom displacement occurring at a given fluence and energy level. The speaker notes that this effect is not linear, but rather exponential or logarithmic, as seen in the data presented.
The presentation also touches on the design considerations for photodiodes in radiation environments. The speaker emphasizes that once the susceptibility to radiation damage is understood, it can be designed around, ensuring that the photodiode system remains robust. This involves understanding the material and device-level effects of radiation, including the response of the photo detector itself. The presentation concludes by highlighting the importance of considering these factors in the design of photodiodes for space technology applications.